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Product Description
Stanford Microdevices SGL-0163 is a high performance cascadeable 50-ohm low noise amplifier designed for operation at voltages as low as 2.5V. The SGL-0163 can be operated at 3V for low power or 4V for medium power applications. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. Internally matched to 50 Ohm impedance, the SGL-0163 requires only an RF choke, DC blocking and bypass capacitors for external components. This device has an internal temperature compensation circuit and can be operated directly from 3-4V supply. Small Signal Gain vs. Frequency
20 15
Preliminary Preliminary
SGL-0163
800-1000 MHz Low Noise Amplifier 50 Ohm, Silicon Germanium
10 5 0 800 850 900 950 1000
3V,11mA 4V,25mA
Product Features Low Noise Figure High Input Intercept Internal Temp. Compensation Circuit Internally Matched to 50 W Unconditionally Stable Low Power Consumption Single Voltage Supply Small Package: SOT-363 Applications Receivers Cellular, Fixed Wireless, Land Mobile
U nits V cc = 3V Min. V cc = 3V Ty p. 5.0 6.4 13.5 15.0 1.1 1.8:1 1.7:1 20.6 8.0 11.0 255 14.0 16.5 V cc = 3V Max. V cc = 4V Ty p. 11.0 11.8 15.7 1.5 1.5:1 1.6:1 20.7 25.0 255
dB
Frequency MHz
Sy mbol P 1dB IIP3 S 21 NF S 12 ID Rth, j-l
Parameters: Test C onditions: Z0 = 50 Ohms, T = 25C Output Power at 1dB C ompressi on Input Thi rd Order Intercept Poi nt Tone spaci ng = 1 MHz Small Si gnal Gai n Noi se Fi gure, ZS = 50 Ohms Input VSWR Output VSWR Reverse Isolati on D evi ce C urrent Thermal Resi stance (juncti on - lead) f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz
dB m dB m dB dB dB mA
o
C /W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com EDS-101501 Rev A
Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l
P arameter S upply C urrent Operati ng Temperature Maxi mum Input P ower Storage Temperature Range Operati ng Juncti on Temperature E S D voltage (Human B ody Model) Value 45 -40 to +85 10 -40 to +150 +150 400 U nit mA C dB m C C V
Pin # 1 2 3
4 5
6
Function D escription N/C No C onnecti on. N/C No C onnecti on. RF IN RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. V cc Supply connecti on. Thi s pi n should be bypassed wi th a sui table capaci tor(s). GND C onnected to ground. For best performance use vi a holes as close to ground leads as possi ble. RF OUT RF output and D C supply. Thi s pi n VC C requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on.
D ev ice Schematic
Vcc
Bias ckt with temp. comp.
RF Out / Vcc
RF In
Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (W) 3V, 11mA Rbias (W) 4V, 25mA 3V 0 4V 91 0 5V 180 39 6V 270 82 7.5V 430 130
Application Schematic
0.1F 22pF Rbias Vs
22nH 50 Ohm microstrip 3 100pF 50 Ohm microstrip 6 100pF
4 5
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com EDS-101501 Rev A
Bias Voltage: 3V
S21 vs. Frequency
25
-40C
Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier
NF vs. Frequency
5 4.5 4 3.5
+25C +85C
-40C +25C 85
20 15
dB
dB
10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2
GHz S11 vs. Frequency
0
-40C +25C +85C
GHz S22 vs. Frequency
0
-40C +25C +85C
-5
-5 -10 -15
dB
-10
-15
dB
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-20 -25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-20
GHz Typical S-Parameters including evaluation board @ T = 25C
S 11 Freq GH z 0.05 0.10 0.20 0.40 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.40 1.60 1.80 2.00 3.00 4.00 5.00 dB -1.65 -1.53 -1.56 -3.78 -6.95 -8.39 -9.73 -10.98 -12.35 -12.93 -13.69 -14.65 -14.89 -14.93 -14.55 -13.78 -10.54 -9.66 An g -10.10 -21.04 -46.05 -94.95 -133.10 -149.91 -166.33 176.74 161.19 145.25 129.17 94.20 62.41 32.92 5.79 -98.28 167.77 43.52 dB 10.33 15.73 19.90 20.19 17.99 16.89 15.86 14.92 13.95 13.22 12.49 11.18 10.05 8.97 7.99 3.45 1.28 0.66 S 21 An g -113.20 -136.59 -179.32 113.44 68.94 51.21 35.23 20.19 5.93 -6.67 -19.64 -44.96 -69.31 -93.12 -116.42 132.95 38.56 -68.46 dB -57.01 -43.87 -34.97 -26.97 -23.59 -22.57 -21.42 -20.60 -19.97 -19.28 -18.65 -17.49 -16.61 -15.73 -15.11 -13.36 -11.59 -9.48 S 12 An g -159.32 151.51 116.17 68.69 36.36 22.87 10.59 -1.18 -13.73 -24.32 -35.19 -56.66 -78.17 -99.63 -120.88 136.24 45.79 -57.19
GHz
S 22 dB -0.46 -0.66 -1.57 -4.98 -8.16 -9.40 -10.52 -11.55 -13.08 -13.78 -14.45 -16.14 -17.81 -19.40 -20.92 -20.92 -19.10 -19.70 An g 167.29 141.56 97.58 29.78 -15.35 -33.66 -50.18 -66.62 -82.02 -91.62 -105.95 -133.73 -161.98 169.38 139.03 -10.75 -132.43 109.26
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com EDS-101501 Rev A
Bias Voltage: 4V
S21 vs. Frequency
30
-40C
Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier
NF vs. Frequency
5 4.5 4 3.5 3
+25C +85C
-40C +25C 85
25 20
dB
15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
dB
2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2
GHz S11 vs. Frequency
0
-40C +25C +85C
GHz S22 vs. Frequency
0
-40C +25C
-5
-5 -10 -15
+85C
dB
-10
-15
dB
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-20 -25 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-20
GHz Typical S-Parameters including evaluation board @ T = 25C
S 11 Freq GH z 0.05 0.10 0.20 0.40 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.40 1.60 1.80 2.00 3.00 4.00 5.00 dB -2.92 -2.70 -2.99 -5.89 -9.23 -10.80 -12.27 -13.74 -15.40 -16.01 -16.97 -18.21 -18.61 -18.63 -17.83 -16.16 -11.67 -10.59 An g -9.82 -21.07 -47.78 -93.30 -127.00 -142.17 -157.37 -173.18 173.72 157.95 140.99 105.07 69.18 37.53 8.83 -91.56 174.62 46.68 dB 14.77 19.88 23.03 21.61 18.96 17.77 16.71 15.74 14.73 13.98 13.24 11.96 10.81 9.70 8.73 4.14 1.90 1.36 S 21 An g -117.69 -145.20 166.72 101.88 61.46 45.17 30.14 15.93 2.28 -9.74 -22.31 -46.63 -70.42 -93.66 -116.57 133.65 40.37 -66.52 dB -53.54 -47.07 -36.16 -27.73 -23.92 -22.81 -21.62 -20.65 -19.80 -19.18 -18.40 -17.18 -16.19 -15.42 -14.77 -13.07 -11.41 -9.32 S 12 An g -168.24 144.73 112.72 73.01 41.45 28.77 16.21 2.77 -9.68 -20.32 -31.19 -54.02 -75.95 -97.56 -119.57 135.52 45.11 -59.16
GHz
S 22 dB -0.47 -0.72 -2.08 -5.97 -9.22 -10.36 -11.55 -12.54 -14.27 -14.92 -15.57 -17.56 -19.69 -21.78 -24.06 -23.01 -19.80 -20.12 An g 167.24 141.30 97.31 35.05 -6.88 -24.66 -40.64 -57.27 -71.95 -81.26 -95.79 -123.51 -150.83 179.48 149.53 -11.64 -138.02 98.21
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com EDS-101501 Rev A
Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
6
5
4
Pin D esignation 1 N/C N/C RF i n V cc GND RF out / Vcc
Note: Pin 1 is on lower left when you can read package marking
L3
1 2 3
Package Dimensions
1.30 (0.051) REF.
2 3 4 5 6
Pad Layout
0.026
2.20 (0.087) 2.00 (0.079)
1.35 (0.053) 1.15 (0.045)
0.075
0.035
0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006)
0.016
0.425 (0.017) TYP. 0.20 (0.0080 0.10 (0.004)
0.30 REF.
10
0.30 (0.012) 0.10 (0.0040
DIMENSIONS ARE IN INCHES [MM]
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com EDS-101501 Rev A
Preliminary Preliminary SGL-0163 800-1000 MHz SiGe Low Noise Amplifier
Evaluation Board layout
Suggested Components
Manufacture Rohm Rohm Rohm TOK O P art N umber MC H185A 200JK MC H185A 101JK MC H182FN104ZK LL1608-FH22NJ D escription
C apaci tor C apaci tor C apaci tor Inductor
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
L3
Value
22 pF 100 pF
0.1 uF
22 nH
6
http://www.stanfordmicro.com EDS-101501 Rev A

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